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Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

著者Mingchao Yang, Liwen Sang, Meiyong Liao, Masataka Imura, Hongdong Li, Yasuo Koide.
掲載誌名physica status solidi (a) 216 [24] 1900538
ISSN: 18626300, 18626319, 00318965
ESIでのカテゴリ: PHYSICS
出版社Wiley
発表年2019
言語English
DOIhttps://doi.org/10.1002/pssa.201900538
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