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Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1−xO2 thin films

Takashi Onaya, Toshihide Nabatame, Takahiro Nagata, Kazuhito Tsukagoshi, Jiyoung Kim, Chang-Yong Nam, Esther H.R. Tsai, Koji Kita.
Solid-State Electronics 210 108801. 2023.
https://doi.org/10.1016/j.sse.2023.108801

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    Created at: 2023-11-03 03:13:27 +0900 Updated at: 2026-07-27 09:33:01 +0900

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