HOME > Profile > OSHIMA, Yuichi
- Address
- 305-0044 1-1 Namiki Tsukuba Ibaraki JAPAN [Access]
Research
PublicationsNIMS affiliated publications since 2004.
Research papers
- Takayoshi Oshima, Yuichi Oshima. Selective area growth of β-Ga<sub>2</sub>O<sub>3</sub> by HCl-based halide vapor phase epitaxy. Applied Physics Express. 15 [7] (2022) 075503 10.35848/1882-0786/ac75c8
- Megan Stokey, Rafał Korlacki, Matthew Hilfiker, Sean Knight, Steffen Richter, Vanya Darakchieva, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Yuichi Oshima, Kamruzzaman Khan, Elaheh Ahmadi, Mathias Schubert. Infrared dielectric functions and Brillouin zone center phonons of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>α</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> compared to <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>α</mml:mi></mml:math> - <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi>Al</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:math>. Physical Review Materials. 6 [1] (2022) 10.1103/physrevmaterials.6.014601
- Yuichi Oshima, Shingo Yagyu, Takashi Shinohe. Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching. Journal of Crystal Growth. 576 (2021) 126387 10.1016/j.jcrysgro.2021.126387
Books
- OSHIMA, Yuichi. Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3. Springer, 2020
- Richard Dronskowski, Shinichi Kikkawa, Andreas Stein. Handbook of Solid State Chemistry. Handbook of Solid State Chemistry (Wiley). Wiley-VCH Verlag GmbH & Co. KGaA, 2017, 429-466. 10.1002/9783527691036
Presentations
- 大島 祐一, 河原克明, 大島孝仁, 四戸孝. In-plane orientation control of (001) k-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism. 63rd Electronic Materials Conference (EMC). 2021
- 大島 祐一, 河原克明, 大島孝仁, 四戸孝. 選択成長を用いた(001) κ-Ga2O3 の面内配向制御. 第68回応用物理学会春季学術講演会. 2021
- 河原克明, OSHIMA, Yuichi, 沖川満, 四戸孝. Elimination of Threading Dislocations in α-Ga2O3 by Double-layered Epitaxial Lateral Overgrowth. The 39th Electronic Materials Symposium 第39回電子材料シンポジウム. 2020
Patents
- No. 6083096 結晶成長方法および結晶成長装置 (2017)
- No. 6143145 β－Ｇａ２Ｏ３単結晶層の製造方法、β―Ｇａ２Ｏ３単結晶層付きサファイア基板、β―Ｇａ２Ｏ３自立単結晶及びその製造方法 (2017)
- No. 6422159 α－Ｇａ２Ｏ３単結晶、α－Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子 (2018)
- No: 2016155714 α−Ｇａ２Ｏ３単結晶、α−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子 (2016)
- No: 2017007871 ε−Ｇａ２Ｏ３単結晶、ε−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子 (2017)
- No: WO2013151045 結晶成長方法および結晶成長装置 (2013)