Research papers

• Akihiro Ohtake, Xu Yang, Jun Nara. Structure and morphology of 2H-MoTe2 monolayer on GaAs(111)B grown by molecular-beam epitaxy. npj 2D Materials and Applications. 6 [1] (2022) 10.1038/s41699-022-00310-y
• Yoshiyuki Yamashita, Jun Nara, Efi Dwi Indari, Takahiro Yamasaki, Takahisa Ohno, Ryu Hasunuma. Experimental and theoretical studies on atomic structures of the interface states at SiO2/4H-SiC(0001) interface. Journal of Applied Physics. 131 [21] (2022) 215303 10.1063/5.0093267
• Keisuke Sagisaka, Jun Nara, Jill K. Wenderott, Ryo Kadowaki, Akane Maruta, Tadashi Abukawa, Daisuke Fujita. Strong suppression of graphene growth by sulfur superstructure on a nickel substrate. Physical Review Materials. 6 [3] (2022) 10.1103/physrevmaterials.6.034007

Proceedings

• TAJIMA, Nobuo, KANEKO, Tomoaki, YAMASAKI, Takahiro, NARA, Jun, Tatsuo Schimizu, Koichi Kato. A first principles study on the C=C defects near SiC/SiO2 interface: Defect passivation by double bond saturation. Proceedings of Solid State Device Material. 2017, 1077-1078
• Takahiro Yamasaki, Nobuo Tajima, Tomoaki Kaneko, Nobutaka Nishikawa, Jun Nara, Tatsuo Schimizu, Koichi Kato, Takahisa Ohno. 4H-SiC Surface Structures and Oxidation Mechanism Revealed by Using First-Principles and Classical Molecular Dynamics Simulations. MATERIALS SCIENCE FORUM. 2016, 429-432
• TAJIMA, Nobuo, KANEKO, Tomoaki, NARA, Jun, OHNO, Takahisa. A first principles study on CVD graphene growth on copper surface: C-C bonding reactions at graphene edges. EXTENDED ABSTRACT OF SOLID STATE DEVICE MATERIALS. 2014, 346-347

Presentations

• 濱田 智之, 大野 隆央, 奈良 純. 遠赤外・テラヘルツ域におけるグラフェンの室温吸光度の理論計算. 第６９回応用物理学会春季学術講演会/https://meeting.jsap.or.jp/. 2022
• 濱田 智之, 大野 隆央, 奈良 純. First principles Study on Absorbance of Triple Layer Graphene in a Far-infrared or Tera-Hz Frequency Region. The 9th International Symposium on Surface Scieence (ISSS). 2021
• 濱田 智之, 大野 隆央, 奈良 純. 遠赤外・テラヘルツ域での3層グラフェン吸光度の第一原理計算. 第82回応用物理学会秋季学術講演会　. 2021

Misc

Patents

• No. 5599089 半導体装置、半導体装置の製造方法、半導体基板、および半導体基板の製造方法 (2014)
• No. 6667809 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 (2020)
• No. 7005847 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 (2022)
• No: 201030968 半導体装置、半導体装置の製造方法、半導体基板、および半導体基板の製造方法 (2010)
• No: 2017216305 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 (2017)
• No: 2020047665 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 (2020)