HOME > Profile > KOIZUMI, Satoshi
- Address
- 305-0044 1-1 Namiki Tsukuba Ibaraki JAPAN [Access]
- Profile
- Leaflet
- Tag cloud
- Connection
Research
- Keywords
機能材料・デバイス 応用物性・結晶工学 薄膜・表面界面物性 電子デバイス・電子機器 無機材料・物性
PublicationsNIMS affiliated publications since 2004.
Research papers
- Zilong Zhang, Haihua Wu, Liwen Sang, Jian Huang, Yukiko Takahashi, Linjun Wang, Masataka Imura, Satoshi Koizumi, Yasuo Koide, Meiyong Liao. Single-crystal diamond microelectromechanical resonator integrating with magneto-strictive galfenol film for magnetic sensor. Carbon. 152 (2019) 788-795 10.1016/j.carbon.2019.06.072
- Meiyong Liao, Liwen Sang, Takehiro Shimaoka, Masataka Imura, Satoshi Koizumi, Yasuo Koide. Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases. Advanced Electronic Materials. 5 [5] (2019) 1800832 10.1002/aelm.201800832
- Meiyong Liao, Liwen Sang, Tokuyuki Teraji, Satoshi Koizumi, Yasuo Koide. Ultrahigh Performance On-Chip Single Crystal Diamond NEMS/MEMS with Electrically Tailored Self-Sensing Enhancing Actuation. Advanced Materials Technologies. 4 [2] (2019) 1800325 10.1002/admt.201800325
Books
- KOIZUMI, Satoshi. n-Type diamond growth and the semiconducting properties. Power Electronics Device Applications of Diamond Semiconductors. 2018 , 117-137
- Toshiharu Makino, KOIZUMI, Satoshi. Nobel diamond devices. Power Electronics Device Applications of Diamond Semiconductors. 2018 , 370-382
- KOIZUMI, Satoshi. n-Type Diamond Growth. Semiconductors and Semimetals. 2003 , 239-259
Proceedings
- D. Takeuchi, H. Kawashima, D. Kuwabara, T. Makino, H. Kato, M. Ogura, H. Ohashi, H. Okushi, S. Yamasaki, S. Koizumi. 4 A/cm<sup>2</sup>, 7kV normally-off diamond-emitter vacuum switch. Proceedings of the 27th International Symposium on Power Semiconductor Devices & IC’s. 2015
- KANDA, Hisao, WATANABE, Kenji, KOIZUMI, Satoshi, T.Teraji, K.Y.Eun, J.K.Lee. Cathodoluminescence spectroscopy and topography of CVD diamonds. Advanced Materials '02. , -
- KOIDE, Yasuo, KOIZUMI, Satoshi, KANDA, Hisao, 鈴木真理子, 吉田博昭, 佐久間尚志, 小野富男, 酒井忠司. Admittance spectroscopy of phosphorus-doped n-diamond epilayer. The 24th EMS Proceedings. 2005, 327-328
Presentations
- ラーザ アンドラーダ, 寺地 徳之, 小泉 聡. High quality boron-doped {111} homoepitaxial diamond thin films grown for electrical device applications . 第24回ダイヤモンドシンポジウム. 2010
- 小泉 聡. ダイヤモンドpn接合冷陰極特性に対する水吸着の影響. 第70回応用物理学会学術講演会. 2009
- 寺地 徳之, 谷口 尚, 小泉 聡, 小出 康夫, 磯谷順一. 原料ガスの高効率利用による同位体濃縮ダイヤモンドの合成. SiC及び関連半導体研究 第22回講演会. 2013
Patents
- No. 6341565 プラズマキャビティ用フランジ、プラズマキャビティ及びプラズマＣＶＤ装置 (2018)
- No. 5360766 ダイヤモンド半導体デバイス (2013)
- No. 4604172 ｎ型半導体ダイヤモンド薄膜の合成法 (2010)
Society memberships
応用物理学会
Awards
- 第27回先端技術大賞フジサンケイ ビジネスアイ賞（2013） ()
Coming soon!
Coming soon!