HOME > Published patent applications > Detail[Published patent application] ｎ型ダイヤモンドＭＯＳＦＥＴおよびその製造方法2026-01-16. CN121359605 (Google Patents) WO2025018165 (Google Patents) NIMS author(s)LIAO, MeiyongKOIZUMI, SatoshiCreated at :2025-02-18 03:07:36 +0900 Updated at :2025-02-18 03:07:36 +0900
