- Address
- 305-0047 茨城県つくば市千現1-2-1 [アクセス]
研究内容
- Keywords
高炉、還元、鉱石
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Tadashi Mitsui, Nobuhiro Ishikawa, Masaki Takeguchi. Photovoltaic distribution on an amorphous-silicon solar cell in near-band-edge excitation observed by conductive-probe atomic force microscopy combined with a fine-wavelength-tunable light source. Review of Scientific Instruments. 92 [9] (2021) 095103 10.1063/5.0056644
- Takashi Inami, Ryo Miyamoto, Kunihiro Tamahashi, Takashi Namekawa, Nobuhiro Ishikawa, Masahiko Ito, Jin Onuki. Impact of Electroplating at Lower Leveler Content on the Formation of Low Resistivity Narrow Cu Interconnects. Journal of The Electrochemical Society. 164 [7] (2017) D505-D510 10.1149/2.1531707jes
- Masahisa Fujino, Naoe Hosoda, Tadatomo Suga, Nobuhiro Ishikawa, Naoki Kuwayama. Surface activated bonding between bulk single crystal diamond and bulk aluminum. Japanese Journal of Applied Physics. 54 [8] (2015) 081301 10.7567/jjap.54.081301
会議録
- Nobuhiro Ishikawa, Tadashi Mitsui, Masaki Takeguchi, Kazutaka Mitsuishi. In-situ observation of the interaction silicon and hematite. Journal of Surface Analysis. (2019) 144-145 10.1384/jsa.26.144
- ISHIKAWA, Nobuhiro, TAKEGUCHI, Masaki, Shuuto Watanabe, Takashi Inami. Dynamic TEM observation of Fe production from FeO which includes Si at the high temperature. Proceedings of ICSTI-2012. (2012) 1306-1309
- ISHIKAWA, Nobuhiro, AOYAGI, Takeshi, KIMURA, Takashi, FURUYA, Kazuo, Takahiro Harada, Takashi Inami. IN-SITU OBSERVATION OF THE REACTION BETWEEN IRON AND CARBON IN TEM. JOURNAL OF SURFACE ANALYSIS. (2009) 333-336
口頭発表
その他の文献
- ISHIKAWA, Nobuhiro, TAKEGUCHI, Masaki, Shuuto Watanabe, Takashi Inami. Dynamic TEM observation of Fe production from FeO which includes Si at the high temperature. Proceedings of ICSTI-2012. (2012) 1306-1309
- 石川 信博, 木村 隆. Sn-Ag系鉛フリーハンダとNu-Pめっき接合界面の構造評価. 金属. 77 [8] (2007) 885-889
特許
- 特許第5370979号 半導体集積回路装置の製造方法 (2013)
- 特許第3849026号 シリコンナノワイヤーの製造方法 (2006)
- 特許第1995998号 半導体ヘテロ薄膜のその場作製および評価方法 (1995)
- 特開2008270250号 半導体集積回路装置及びその製造方法 (2008)
- 特開2005112701号 シリコンナノワイヤーの製造方法 (2005)
- 特開H06268037号 半導体ヘテロ薄膜のその場作製および評価方法 (1994)