HOME > Profile > KATO, Seiichi
- Address
- 305-0044 1-1 Namiki Tsukuba Ibaraki JAPAN [Access]
Research
PublicationsNIMS affiliated publications since 2004.
Published patent applications
- 熱発電コイル及び熱発電モジュール (2025)
- 熱発電セル及び熱発電モジュール (2021)
- 熱発電セル及び熱発電モジュール (2020)
Society memberships
応用物理学会
Research Center for Materials Nanoarchitectonics (MANA)
Research on p-type thin-film transistors (TeOx)
oxide semiconductor, thin-film transistor, p-type, TeOx
Overview
While n-type thin-film transistors (TFTs) are widely used in practical applications, no p-type TFTs have yet achieved performance levels suitable for practical use. Against this backdrop, TeOx has been attracting attention—including recent reports of successful efforts to enhance its performance—and is viewed as a promising material for p-type TFTs. Although TeOx is inherently an insulator, it may exhibit TFT characteristics when fabricated using vacuum deposition. Therefore, we will fabricate TeOx via vacuum deposition, investigate the conditions under which TFT characteristics emerge, and examine the operating principle.
Novelty and originality
● It has been demonstrated that, in order for TeOx to exhibit TFT properties, it is essential to reduce the raw materials to create Te nanoparticles.
● It has been shown that electrical conductivity in TeOx results from hopping conduction between Te nanoparticles.
● It has been shown that the conventional method using a W-boat is not suitable for quantitative evaluation.
Details


When fabricating TeOx thin films by vacuum deposition, it is common to use a tungsten (W) boat. However, with this method, it is difficult to perform an accurate evaluation because the raw materials—TeO₂ and W—react chemically. Therefore, we used an alumina crucible, which is less prone to reaction, and fabricated thin films using a mixture of TeO₂ and W powder as the raw material to investigate the effect of W. We found that samples containing 15 wt% or more of W exhibited TFT characteristics, whereas those containing 10 wt% or less behaved as insulators and did not function as TFTs (fig. 1). XPS measurements revealed that peaks originating from Te-Te bonds were observed in the thin films exhibiting TFT characteristics, whereas they were scarcely detected in the insulating films (fig. 2). Furthermore, TEM observations and X-ray diffraction patterns revealed the presence of metallic Te nanoparticles within the amorphous TeOx. Results from SIMS and other techniques also indicated that W was not present in the thin films. Therefore, it is believed that W reduces the TeO₂ in the raw material, thereby diluting the oxygen concentration in the thin film; the dispersion of metallic Te nanoparticles then enables electrical conduction via hopping.
Summary
Thin films were fabricated using a mixture of TeO₂ and Te powder as the raw material via vacuum deposition. An analysis of the electrical properties revealed that samples containing 15% or more W exhibited p-type TFT characteristics, whereas those containing 10% or less behaved as insulators. Analysis using X-ray and TEM revealed that W reduces the oxygen content in the thin film by reducing TeO₂, and that hopping conduction occurs due to the formation of Te nanoparticles.


