HOME > 会議録 > 書誌詳細Reduction in Oxygen Vacancy Formation Energy Caused by Nitrogen Incorporation in Hf-based High-k Gate DielectricsUMEZAWA, Naoto, Kenji Shiraishi , Yasushi Akasaka, Seiji Inumiya, Akira Uedeno , Seiichi Miyazaki , CHIKYOW, Toyohiro, OHNO, Takahisa, Yasuo Nara, Keisaku Yamada . SISC ABSTRACT 8.3-8.3. 2005.NIMS著者知京 豊裕大野 隆央Materials Data Repository (MDR)上の本文・データセット作成時刻 :2017-02-27 00:57:53 +0900 更新時刻 :2017-03-17 02:58:10 +0900