HOME > Proceedings > DetailReduction in Oxygen Vacancy Formation Energy Caused by Nitrogen Incorporation in Hf-based High-k Gate DielectricsUMEZAWA, Naoto, Kenji Shiraishi , Yasushi Akasaka, Seiji Inumiya, Akira Uedeno , Seiichi Miyazaki , CHIKYOW, Toyohiro, OHNO, Takahisa, Yasuo Nara, Keisaku Yamada . SISC ABSTRACT 8.3-8.3. 2005.NIMS author(s)CHIKYO, ToyohiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-27 00:57:53 +0900Updated at: 2017-03-17 02:58:10 +0900