HOME > Proceedings > DetailFORMATION MECHANISM OF SIC IN C-SI SYSTEM BY ION IRRADIATION(Si-C系でのイオン照射によるSiCの形成機構)HISHITA, Shunichi, AIZAWA, Takashi, SUEHARA, Shigeru, HANEDA, Hajime. JAERI-Conf 2003-001 228-232. 2003.NIMS author(s)HISHITA, ShunichiAIZAWA, TakashiSUEHARA, ShigeruHANEDA, HajimeFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-27 00:24:56 +0900Updated at: 2017-03-17 02:27:26 +0900