HOME > Presentation > DetailInvestigation of HfSiOx gate insulator formed by changing fabrication process conditions for GaN power device生田目 俊秀, 前田 瑛里香, 井上 万里, 廣瀨 雅史, Ryota Ochi, 色川 芳宏, Tamotsu Hashizume, Koji Shiozaki, 小出 康夫. AWAD2021. 2021. InvitedNIMS author(s)NABATAME, ToshihideIROKAWA, YoshihiroKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2021-09-18 03:00:22 +0900Updated at: 2024-03-05 12:21:42 +0900