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Irradiation Temperature Dependence of Residual Defects in 17MeV-Proton Bombereded Silicon
(17MeVプロトン照射したSiにおける残留欠陥の照射温度依存性)

AMEKURA, Hiroshi, 岸本直樹, KONO, Kenichiro, 斎藤鉄哉, 岸本直樹, 斎藤鉄哉.
第18回半導体欠陥国際会議. July 23, 1995-July 28, 1995.

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    Created at: 2017-02-14 11:45:26 +0900 Updated at: 2023-04-09 15:01:52 +0900

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