HOME > Presentation > DetailIrradiation Temperature Dependence of Residual Defects in 17MeV-Proton Bombereded Silicon(17MeVプロトン照射したSiにおける残留欠陥の照射温度依存性)AMEKURA, Hiroshi, 岸本直樹, KONO, Kenichiro, 斎藤鉄哉, 岸本直樹, 斎藤鉄哉. 第18回半導体欠陥国際会議. July 23, 1995-July 28, 1995.NIMS author(s)AMEKURA, HiroshiKONO, KenichiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 11:45:26 +0900 Updated at: 2023-04-09 15:01:52 +0900