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水素終端Si(001)表面上へのGe原子吸着に関する第一原理計算
(First-Principles Study of Ge adsorption on H/Si(001) surface)
25th International Conference on the Physics of Semiconductors (. September 17, 2000-September 22, 2000.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:41:40 +0900 Updated at: 2017-07-10 18:12:49 +0900