(Electrostatically-Reversible Polarity of Dual-Gated Graphene Transistors with He Ion Irradiated Channel: Toward Reconfigurable CMOS Applications)
IEEE International Electron Devices Meeting (IEDM). 2012.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-02-14 11:09:18 +0900更新時刻: 2017-07-10 21:30:53 +0900