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Electrostatically-Reversible Polarity of Dual-Gated Graphene Transistors with He Ion Irradiated Channel: Toward Reconfigurable CMOS Applications

著者中払 周, Tomohiko Iijima, Shinich Ogawa, Shingo Suzuki, 塚越 一仁, Shintaro Sato, Naoki Yokoyama.
会議名IEEE International Electron Devices Meeting (IEDM)
発表年2012
言語Japanese

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