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(Electrostatically-Reversible Polarity of Dual-Gated Graphene Transistors with He Ion Irradiated Channel: Toward Reconfigurable CMOS Applications)
IEEE International Electron Devices Meeting (IEDM). December 16, 2012-December 19, 2012.
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Created at: 2017-02-14 11:09:18 +0900 Updated at: 2017-07-10 21:30:53 +0900