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GaN/HfSiOx界面でSiO2及びHfO2初期成長層が電気特性へ及ぼす影響
(Influence of SiO2 and HfO2 initial growth layers on electrical properties at GaN/HfSiOx interface)
第67回応用物理学会春季学術講演会. March 12, 2020-March 15, 2020.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2020-03-17 03:00:21 +0900Updated at: 2020-03-17 03:00:21 +0900