HOME > Presentation > DetailLow-temperature AlN Buffer Layer Technique to Eliminate the Small-angle Grain Boundary in AlN Grown on Sapphire Substrateバナル ガニパン ライアン, 井村 将隆, 小出 康夫. The 6th International Symposium on Growth of III-Nitrides. 2015.NIMS author(s)IMURA, MasatakaKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-01-08 04:01:57 +0900Updated at: 2017-07-10 22:17:08 +0900