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17Mev陽子線照射によるN-Si中の照射欠陥生成率の線量率依存性。
(Flux dependent generation rate of irradiation induced defecfs in N-Si under 17Mevproton irradiation.)
1998年秋期第59回応用物理学会学術講演会. September 15, 1998-September 18, 1998.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-18 01:32:45 +0900 Updated at: 2017-07-10 17:50:45 +0900