HOME > Presentation > Detail過剰酸素の抑制による真空環境で安定なIn-Si-O TFT(Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors)相川 慎也, 三苫 伸彦, 木津 たきお, 生田目 俊秀, 塚越 一仁. 第76回応用物理学会秋季学術講演会. September 13, 2015-September 16, 2015.NIMS author(s)NABATAME, ToshihideTSUKAGOSHI, KazuhitoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 11:12:39 +0900 Updated at: 2017-07-10 22:11:16 +0900