HOME > Presentation > DetailDevelopment of fluoride based high-k dielectric thin film for GaN MIS capacitor長田 貴弘, 上田 茂典, 山下 良之, 松田 朝彦, 知京 豊裕. 2017 IWDTF. November 20, 2017-November 22, 2017.NIMS author(s)NAGATA, TakahiroUEDA, ShigenoriYAMASHITA, YoshiyukiMATSUDA, AsahikoCHIKYO, ToyohiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-09-20 22:29:48 +0900 Updated at: 2018-06-05 14:13:10 +0900