HOME > Presentation > DetailDevelopment of fluoride based high-k dielectric thin film for GaN MIS capacitor長田 貴弘, 上田 茂典, 山下 良之, 松田 朝彦, 知京 豊裕. 2017 IWDTF. 2017.NIMS author(s)NAGATA, TakahiroUEDA, ShigenoriYAMASHITA, YoshiyukiMATSUDA, AsahikoCHIKYO, ToyohiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-09-20 22:29:48 +0900Updated at: 2018-06-05 14:13:10 +0900