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ReS2/SiO2とReS2/hBN 電界効果トランジスタの電荷トラップとヒストリシス特性
(Charge Trapping and Hysteresis Behavior in ReS2/SiO2 and ReS2/hBN Field-Effect Transistors)
The 79th JSAP Autumn Meeting 2018. 2018.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2018-07-14 16:06:35 +0900Updated at: 2018-07-14 16:06:35 +0900