HOME > Presentation > DetailCharacteristic of flexible ReRAM with Al2O3/TiO2 active layer by ALD and PDA process at low temperatureNABATAME, Toshihide, 大石知司, 井上 万里, 高橋 誠, 伊藤和博, IKEDA, Naoki, OHI, Akihiko. PRime2020. October 04, 2020-October 09, 2020.NIMS author(s)NABATAME, ToshihideIKEDA, NaokiOHI, AkihikoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2020-10-17 03:00:20 +0900 Updated at: 2020-10-17 03:00:20 +0900