HOME > Presentation > DetailEffect of Conduction Band Offset on Breakdown Voltage at SiO2/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopyインダリ エフィ ダウィ, 山下 良之, 長田 貴弘, 上田 茂典, Ryu Hasunuma, Kikuo Yamabe. 79th of JSAP Autumn Meeting 2018. September 18, 2018-September 21, 2018.NIMS author(s)YAMASHITA, YoshiyukiNAGATA, TakahiroUEDA, ShigenoriFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2018-07-14 16:06:38 +0900Updated at: 2018-07-14 16:06:38 +0900