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酸化還元熱処理がITO/HfO2 MOSキャパシタのフラットバンド電圧に及ぼす影響
(The effect of redox annealing on flatband voltage in ITO/HfO2 MOS capacitors)
The Eighth International Nanotechnology Conference on Communicat. May 08, 2012-May 11, 2012.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 05:02:12 +0900Updated at: 2017-07-10 21:20:33 +0900