Study of High-k gate insulator for GaN power device by atomic layer deposition
31st International Microprocesses and Nanotechnology Conference. 2018. 招待講演
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2018-09-07 16:20:43 +0900更新時刻: 2024-03-05 12:20:46 +0900