Characterization of mid-gap defect level in ZnO by high resolution X-ray photoelectron spectroscopy using synchrotron orbital radiation
The 34th International Symposium on Compound Semiconductors (ISC. 2007.
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Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-02-14 10:51:37 +0900更新時刻: 2017-07-10 20:00:46 +0900