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Characterization of mid-gap defect level in ZnO by high resolution X-ray photoelectron spectroscopy using synchrotron orbital radiation
The 34th International Symposium on Compound Semiconductors (ISC. October 15, 2007-October 18, 2007.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 10:51:37 +0900 Updated at: 2017-07-10 20:00:46 +0900