HOME > Presentation > DetailElectrical properties of GaN MOS capacitors with ALD-High-k gate insulatorsNABATAME, Toshihide, IROKAWA, Yoshihiro, 塩崎 宏司, KOIDE, Yasuo. MATERIALS RESEARCH MEETING 2019. 2019. InvitedNIMS author(s)NABATAME, ToshihideIROKAWA, YoshihiroKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-12-25 03:00:21 +0900Updated at: 2024-03-05 12:21:17 +0900