HOME > Presentation > Detail
(High quality boron-doped {111} homoepitaxial diamond thin films grown for electrical device applications )
第24回ダイヤモンドシンポジウム. November 17, 2010-November 19, 2010.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 05:04:09 +0900 Updated at: 2017-07-10 20:57:16 +0900