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high-k CMOSへ向けてPE-ALD法で作製したAl2O3, TiO2及びAlTiOx膜の電気特性
(Electrical properties of Al2O3, TiO2 and AlTiOx films grown by PE-ALD process for high-k CMOS)
12th International Conference on Atomic Layer Deposition. June 17, 2012-June 20, 2012.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:02:11 +0900 Updated at: 2017-07-10 21:19:52 +0900