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GaAs(111)A基板上の高対称性量子ドットLEDの作製
(Fabrication of highly symmetric QD LED on GaAs (111)A)

応用物理学会秋季学術講演会. September 13, 2015-September 16, 2015.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2017-02-14 11:05:13 +0900 Updated at: 2017-07-10 22:11:19 +0900

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