HOME > Presentation > DetailGaAs(111)A基板上の高対称性量子ドットLEDの作製(Fabrication of highly symmetric QD LED on GaAs (111)A)間野 高明, 黒田 隆, ハ ヌル, 野田 武司, 佐久間 芳樹, 迫田 和彰. 応用物理学会秋季学術講演会. 2015.NIMS author(s)MANO, TakaakiKURODA, TakashiNODA, TakeshiSAKUMA, YoshikiSAKODA, KazuakiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 11:05:13 +0900Updated at: 2017-07-10 22:11:19 +0900