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HfO2ゲートスタックにおける(TaC)1-xAlx電極のAl原子がVfbに果たす役割
(Role of Al atoms in (TaC)1-xAlx gate electrode on Vfb for HfO2 gate stack)
The 3rd NIMS(MANA)- Waseda International Symposium. 2011-11-01.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:22:56 +0900Updated at: 2017-07-10 21:12:05 +0900