Crystal-face-dependent electron trapping behavior under high-field stress in Al2O3/GaN MOS structures fabricated through a dummy SiO2 process

Masahiro HARA, NABATAME, Toshihide, SAWADA, Tomomi, 宮本真奈美, 三浦博美, IROKAWA, Yoshihiro, Tsunenobu Kimoto, KOIDE, Yasuo.

12th International Workshop on Nitride Semiconductors. November 03, 2024-November 08, 2024.

Created at: 2024-11-27 17:37:02 +0900 Updated at: 2024-11-27 17:37:02 +0900