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Characteristics of GaN/HfSiOx interface for n-GaN/HfSiOx/Pt MOS capacitor

前田 瑛里香, NABATAME, Toshihide, 廣瀨 雅史, 井上 万里, OHI, Akihiko, 塩崎宏司, 清野肇, IKEDA, Naoki.
International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS (THERMEC'2021). June 01, 2021-June 05, 2021.

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Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2021-06-09 03:00:17 +0900 Updated at: 2021-06-09 03:00:17 +0900

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