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Microstructure of In0.20Ga0.80N nanowires on Si (111) substrate evaluated by aberration-corrected scanning transmission electron
The 11th International Symposium on Semiconductor Light Emitting. October 08, 2017-October 12, 2017.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-12-27 22:10:02 +0900Updated at: 2018-06-05 14:12:05 +0900