Microstructure of In0.20Ga0.80N nanowires on Si (111) substrate evaluated by aberration-corrected scanning transmission electron
The 11th International Symposium on Semiconductor Light Emitting. 2017.
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Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-12-27 22:10:02 +0900更新時刻: 2018-06-05 14:12:05 +0900