(Atomistic Behavior of Nitrogen Atoms in Hf-based High-k Gate Dielectrics: First-principles Study)
Seminar. 2005.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-02-14 11:45:13 +0900更新時刻: 2017-07-10 19:24:54 +0900