HOME > Presentation > Detail(Atomistic Behavior of Nitrogen Atoms in Hf-based High-k Gate Dielectrics: First-principles Study)梅澤 直人, 白石 賢二, 鳥居和功, Mauro Boero, 知京 豊裕, 渡部 平司, 大野 隆央, 山部 紀久夫, 山田 啓作, 奈良安雄. Seminar. 2005.NIMS author(s)CHIKYO, ToyohiroOHNO, TakahisaFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2017-02-14 11:45:13 +0900 Updated at :2017-07-10 19:24:54 +0900