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ポリイミド光配向膜上の高配向F8T2 -電界効果トランジスタの特性
(Electrical characteristics of highly-oriented-F8T2 field-effect transistors formed on photo-aligned polyimide films)
2011年日本液晶学会討論会. September 11, 2011-September 13, 2011.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:25:08 +0900 Updated at: 2017-07-10 21:08:26 +0900