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ポリイミド光配向膜上の高配向F8T2 -電界効果トランジスタの特性
(Electrical characteristics of highly-oriented-F8T2 field-effect transistors formed on photo-aligned polyimide films)

坂本 謙二, 安田 剛, 三木 一司, 近松真之, 阿澄玲子.
2011年日本液晶学会討論会. 2011.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at :2017-01-08 04:25:08 +0900 Updated at :2017-07-10 21:08:26 +0900

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