HOME > Presentation > Detailポリイミド光配向膜上の高配向F8T2 -電界効果トランジスタの特性(Electrical characteristics of highly-oriented-F8T2 field-effect transistors formed on photo-aligned polyimide films)坂本 謙二, 安田 剛, 三木 一司, 近松真之, 阿澄玲子. 2011年日本液晶学会討論会. 2011.NIMS author(s)SAKAMOTO, KenjiYASUDA, TakeshiFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2017-01-08 04:25:08 +0900 Updated at :2017-07-10 21:08:26 +0900