HOME > Presentation > Detail
Low Temperature Growth of GaN film by Near-Atmospheric Plasma-Assisted Chemical Vapor Deposition
the 7th International Conference of Nitride Semiconductors. September 16, 2007-September 21, 2007.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:21:52 +0900Updated at: 2017-07-10 19:58:48 +0900