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Direct observation of bias-dependence potential distribution in metal/HfO2 gate stack structures by operando hard x-ray photoelectron spectroscopy

the Fourteenth International Conference on Electronic Spectroscopy and Structure. 2018.

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    作成時刻 :2019-03-04 09:36:56 +0900 更新時刻 :2019-03-04 09:36:56 +0900

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