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Direct observation of bias-dependence potential distribution in metal/HfO2 gate stack structures by operando hard x-ray photoelectron spectroscopy
the Fourteenth International Conference on Electronic Spectroscopy and Structure. 2018.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2019-03-04 09:36:56 +0900Updated at: 2019-03-04 09:36:56 +0900