HOME > 口頭発表 > 書誌詳細Characteristics of several High-k gate insulators for GaN power deviceNABATAME, Toshihide, 前田 瑛里香, INOUE, Mari, 廣瀨 雅史, 清野肇, IROKAWA, Yoshihiro, 塩崎宏司, KOIDE, Yasuo. 236th ECS Meeting. 2019. 招待講演NIMS著者生田目 俊秀色川 芳宏小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-10-30 03:00:17 +0900更新時刻: 2024-03-05 12:21:13 +0900
