HOME > Presentation > Detail(Intrinsic Effect of a Nitrogen Atom on Hf-based High-k Gate Dielectrics -A First Principles Study)梅澤 直人, 白石 賢二, 大野 隆央, 渡部 平司, 知京 豊裕, 鳥居和功, 山部 紀久夫, 山田 啓作, 北島洋, 有門経敏. American Physical Society March Meeting. 2005.NIMS author(s)CHIKYO, ToyohiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 11:04:01 +0900Updated at: 2017-07-10 19:12:07 +0900