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酸化還元熱処理がITO/HfO2 MOSキャパシタのフラットバンド電圧に及ぼす影響
(The effect of redox annealingon flatband voltage in ITO/HfO2 MOS capacitors)
The 3ed NIMS(MANA)- Waseda International Symposium. 2011-11-01.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 10:57:27 +0900Updated at: 2017-07-10 21:12:05 +0900