Different growth mechanism of SiO2 layer on various High-k films by PE-ALD using Tris(dimethylamino)silane and oxygen plasma
18th International Conference on Atomic Layer Deposition. 2018.
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Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2018-02-20 22:07:43 +0900更新時刻: 2018-06-05 14:18:23 +0900