HOME > 口頭発表 > 書誌詳細Interface Dipole Modulation in HfO2/SiO2 MOS Stack Structures宮田 典幸, YAMASAKI, Takahiro, Kyoko Sumita, NARA, Jun, Ryousuke Sano, 野平博司. 2018 IEEE International Electron Devices Meeting. 2018.NIMS著者奈良 純Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-03-04 09:37:14 +0900更新時刻: 2019-03-04 09:37:14 +0900
