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Charge trap memory based on MoS2 with He+-irradiated h-BN as a trapping layer

Mahito Yamamoto, IWASAKI, Takuya, Keiji Ueno, TANIGUCHI, Takashi, WATANABE, Kenji, Tomohiko Iijima, Shinichi Ogawa, WAKAYAMA, Yutaka, Shu Nakaharai.
第85回応用物理学会秋季学術講演会. September 16, 2024-September 20, 2024.

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

    Created at: 2024-10-01 03:15:42 +0900 Updated at: 2024-10-01 03:15:42 +0900

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